FP10R12W1T4 Infineon Technologies IGBT Modules N-CH 1.2KV 20A

Manufacturer: INFINEON

SKU: RSMN2609

Old price: 250.00 (SAR)

Price: 140.00 (SAR)

Qty: GET A QUOTE FOR THIS

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Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	IGBT Modules

Product:	IGBT Silicon Modules
Configuration:	3-Phase Inverter
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Continuous Collector Current at 25 C:	20 A
Gate-Emitter Leakage Current:	400 nA
Pd - Power Dissipation:	105 W

Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	Infineon Technologies
Height:	12 mm
Length:	62.8 mm
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
Series:	Trenchstop IGBT4 - T4

Product tags

Item	Unit Price	Unit Tax	Subtotal	Action
FP10R12W1T4 Infineon Technologies IGBT Modules N-CH 1.2KV 20A	140.00 (SAR)	21.00	161.00 (SAR)
			Shipping	0.00
			Total	161.00 (SAR)

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