IGBT- BSM35GD120DN2E3224 Infineon IGBT Modules N-CH 1.2KV 50A

Manufacturer: INFINEON

SKU: PCM857

Old price: 455.00 (SAR)

Price: 351.00 (SAR)

Qty: GET A QUOTE FOR THIS

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:	N
Product:	IGBT Silicon Modules
Configuration:	Hex
Collector- Emitter Voltage VCEO Max:	1200 V
Collector-Emitter Saturation Voltage:	2.7 V
Continuous Collector Current at 25 C:	50 A
Gate-Emitter Leakage Current:	150 nA
Pd - Power Dissipation:	280 W
Package/Case:	EconoPACK 2
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	Infineon Technologies
Height:	17 mm
Length:	107.5 mm
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Chassis Mount
Product Type:	IGBT Modules
Subcategory:	IGBTs
Technology:	Si
Width:	45 mm
Part # Aliases:	SP000091898 BSM35GD120DN2E3224BOSA1
Unit Weight:	184 g

Product tags

Item	Unit Price	Unit Tax	Subtotal	Action
IGBT- BSM35GD120DN2E3224 Infineon IGBT Modules N-CH 1.2KV 50A	351.00 (SAR)	52.65	403.65 (SAR)
			Shipping	0.00
			Total	403.65 (SAR)

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